Silicon on Sapphire Material Processing
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Del.icio.us| IP.com Number | IPCOM000055312D |
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| Dated | Jun 1, 1980 UTC | ||
| Size | 2 page(s) (31.1 KB) | ||
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Publication Summary
Strains and defects in a silicon on sapphire (SOS) film may be reduced by rapid annealing, as shown in Fig. 1, using laser, E-beam or incoherent light to remove the strain in the film. The interface region of the silicon and the sapphire is next rendered amorphous by channelled implanting of heavy doses of silicon, as shown in Fig. 2. Finally, the silicon on sapphire is annealed thermally at 600-700 degrees C which produces solid phase epitaxial growth from the unstrained topside silicon down to the sapphire interface, as shown in Fig. 3.| Country | United States |
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| Language | English (United States) |
| Related Person(s) |
(AUTHOR) Fang, FF (AUTHOR) Sai Halasz, G |
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Silicon on Sapphire Material Processing
Strains and defects in a silicon on sapphire (SOS) film may be reduced by rapid annealing, as shown in Fig. 1, using laser, E-beam or incoherent light to remove the strain in the film. The interface region of the silicon and the sapphire is next rendered amorphous by channelled implanting of heavy doses of silicon, as shown in Fig. 2. Finally, the silicon on sapphire is annealed thermally at 600- 700 degrees C which produces solid phase epitaxial growth from the unstrained topside silicon down to the sapphire interface, as shown in Fig. 3.
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